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詳細情報 |
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| 材料: | 炭化シリコンとグラファイト | 密度: | 2.21-2.25 g/cm3 |
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| 形: | 円筒形 | 耐熱性: | 最大1600°C |
| 応用: | 真空溶解・高純度加工 | 雰囲気: | 真空/無活性ガス |
| 純度レベル: | 超高 | 排出ガス: | 最低限 |
| ハイライト: | vacuum melting silicon carbide crucible,graphite crucible for superalloy processing,high purity silicon carbide crucible |
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製品の説明
Vacuum Melting SiC Graphite Crucible for High Purity Processing
Engineered for vacuum and inert gas atmosphere melting applications. Ultra-low outgassing characteristics ensure contamination-free processing of high-value superalloys and specialty metals.
Key Features
- Ultra-low outgassing in vacuum conditions
- Minimal contamination risk
- Compatible with argon/nitrogen atmospheres
- High purity graphite matrix
- Temperature up to 1600C in vacuum
Applications
Vacuum induction melting (VIM), superalloy processing, high-purity metal production, aerospace material preparation.
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