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詳細情報 |
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| 材料: | 炭化シリコンとグラファイト | 密度: | 2.21-2.25 g/cm3 |
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| 形: | 円筒形 | 耐熱性: | 1650°Cまで |
| プロセス: | 真空溶解 | 応用: | 半導体ターゲット用電子グレード銅 |
| 純度: | 6N (99.9999%) | 雰囲気: | 高真空 |
| ハイライト: | electronic grade copper melting crucible,SiC graphite crucible for semiconductors,vacuum melting crucible for target material |
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製品の説明
Vacuum Melting Electronic Grade Copper SiC Graphite Crucible
Ultra-high purity crucible for vacuum melting of 6N (99.9999%) electronic grade copper used in semiconductor sputtering targets. Minimal outgassing and zero contamination design.
Key Features
- Vacuum compatible ultra-low outgassing
- 6N purity retention capability
- Semiconductor grade material quality
- Clean melting for target manufacturing
- Batch traceability documentation
Applications
Semiconductor sputtering target production, electronic grade copper melting, high-purity copper for chip manufacturing, PVD target material preparation.
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